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STB34N50DM2AG Даташит - STMicroelectronics

STB34N50DM2AG image

Номер в каталоге
STB34N50DM2AG

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page
15 Pages

File Size
909.4 kB

производитель
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.


FEATUREs
• Designed for automotive applications and
   AEC-Q101 qualified
• Fast-recovery body diode
• Extremely low gate charge and input
   capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected


APPLICATIONs
• Switching applications


Номер в каталоге
Компоненты Описание
PDF
производитель
Automotive-grade N-channel 500 V, 0.07 Ω typ., 35 A MDmesh™ DM2 Power MOSFET in a D²PAK package
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Automotive-grade N-channel 600 V, 85 mΩ typ., 34 A MDmesh DM2 Power MOSFET in a D²PAK package
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Automotive-grade N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a D²PAK package ( Rev : 2015 )
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Automotive-grade N-channel 200 V, 0.10 Ω typ., 18 A STripFET™ Power MOSFET in a DPAK package
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Automotive-grade N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a TO-247 package
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N-channel 500 V, 0.299 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK package
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Automotive-grade N-channel 500 V, 0.336 Ω typ., 10 A MDmesh™ M2 Power MOSFET in a DPAK package
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N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a D²PAK package
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Automotive-grade N-channel 650 V, 0.058 Ω typ., 42 A MDmesh™ M5 Power MOSFET in a D²PAK package ( Rev : 2015 )
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N-channel 600 V, 0.260 Ω typ., 12 A MDMesh™ DM2 Power MOSFET in a D²PAK package ( Rev : 2016 )
STMicroelectronics

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