STB18N60DM2(2016) Даташит - STMicroelectronics
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STB18N60DM2
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15 Pages
File Size
887 kB
производитель
STMicroelectronics
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
• Fast-recovery body diode
• Extremely low gate charge and input
capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
APPLICATIONs
• Switching applications
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производитель
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