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STB24N60M6 Даташит - STMicroelectronics

STB24N60M6 image

Номер в каталоге
STB24N60M6

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16 Pages

File Size
437.3 kB

производитель
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.
STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.


FEATUREs
• Reduced switching losses
• Lower RDS(on) per area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected


APPLICATIONs
• Switching applications
• LLC converters
• Boost PFC converters


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производитель
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Automotive-grade N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET in a TO-220FP package
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N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in a TO-220FP package
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Automotive-grade N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a D²PAK package ( Rev : 2015 )
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