STF6N60DM2 Даташит - STMicroelectronics
Номер в каталоге
STF6N60DM2
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12 Pages
File Size
290.1 kB
производитель
STMicroelectronics
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
APPLICATIONs
• Switching applications
Номер в каталоге
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производитель
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