General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

FEATUREs
■ Logic level threshold
■ Optimized for use in DC-to-DC converters
■ 100 % RG tested
■ Lead-free package
■ Very low switching and conduction losses
■ 100 % ruggedness tested

APPLICATIONs
■ DC-to-DC converters
■ Voltage regulators
■ Switched-mode power supplies
■ PC Motherboards

Quick reference data
■ VDS ≤ 25 V
■ RDSon ≤ 9 mΩ
■ ID ≤ 66 A
■ QGD = 2.7 nC (typ)