PH9025L Просмотр технического описания (PDF) - NXP Semiconductors.
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PH9025L Datasheet PDF : 12 Pages
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NXP Semiconductors
PH9025L
N-channel TrenchMOS logic level FET
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown
voltage
VGS(th) gate-source threshold voltage
IDSS
drain leakage current
IGSS
RG
RDSon
gate leakage current
gate resistance
drain-source on-state
resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 25 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±20 V; VDS = 0 V
f = 1 MHz
VGS = 10 V; ID = 10 A; see Figure 6 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 4.5 V; ID = 10 A; see Figure 6 and 8
QG(tot)
QGS
total gate charge
gate-source charge
ID = 10 A; VDS = 12 V; VGS = 4.5 V;
see Figure 11 and 12
QGS1 pre-VGS(th) gate-source charge
QGS2 post-VGS(th) gate-source charge
QGD
gate-drain charge
VGS(pl) gate-source plateau voltage
Ciss
input capacitance
Coss
output capacitance
VGS = 0 V; VDS = 30 V; f = 1 MHz;
see Figure 14
Crss
reverse transfer capacitance
Ciss
input capacitance
VGS = 0 V; VDS = 0 V; f = 1 MHz
td(on)
tr
turn-on delay time
rise time
VDS = 12 V; RL = 0.5 Ω; VGS = 4.5 V;
RG = 5.6 Ω
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
IS = 25 A; VGS = 0 V; see Figure 13
IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V
Min Typ Max Unit
25 -
-
V
22.5 -
-
V
1.3 1.7 2.15 V
0.8 -
-
V
-
-
2.6 V
-
-
1
µA
-
-
100 µA
-
-
100 nA
-
0.6 -
Ω
-
6.3 9
mΩ
-
9.3 14.4 mΩ
-
9.4 13 mΩ
-
12.8 -
nC
-
4.3 -
nC
-
2.82
nC
-
1.50
nC
-
2.7 -
nC
-
2.6 -
V
-
1414 -
pF
-
387 -
pF
-
183 -
pF
-
1870 -
pF
-
21 -
ns
-
39 -
ns
-
24 -
ns
-
15 -
ns
-
0.89 -
V
-
47 -
ns
-
17 -
nC
PH9025L_1
Product data sheet
Rev. 01 — 23 August 2007
© NXP B.V. 2007. All rights reserved.
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