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NX6352GP Даташит - California Eastern Laboratories.

NX6352GP image

Номер в каталоге
NX6352GP

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6 Pages

File Size
560.2 kB

производитель
CEL
California Eastern Laboratories. CEL

DESCRIPTION
The NX6352GP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.


FEATURES
• Optical output power PO = 8.5 mW
• Low threshold current Ith = 7 mA
• Differential efficiency ηd = 0.35 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 7.5 mm


APPLICATIONS
• 9.8 Gbps CPRI
• 10G E-PON ONU


Номер в каталоге
Компоненты Описание
PDF
производитель
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
California Eastern Laboratories.
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
California Eastern Laboratories.
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
California Eastern Laboratories.
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE
Renesas Electronics

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