NX6240GP Даташит
производитель
Номер в каталоге
Компоненты Описание
View
California Eastern Laboratories.
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
California Eastern Laboratories.
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
Match & Start : NX6240GP
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS
California Eastern Laboratories.
NEC's 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR LONG HAUL 2.5 Gb/s APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
California Eastern Laboratories.
NECʼs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS
California Eastern Laboratories.
NEC's1550 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
California Eastern Laboratories.
NEC's InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
California Eastern Laboratories.
NEC's1550 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
California Eastern Laboratories.
NEC's1550 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
Renesas Electronics
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
California Eastern Laboratories.
1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION