datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  California Eastern Laboratories.  >>> NX6350GP33-AZ PDF

NX6350GP33-AZ Даташит - California Eastern Laboratories.

NX6350GP image

Номер в каталоге
NX6350GP33-AZ

Other PDF
  no available.

PDF
DOWNLOAD     

page
6 Pages

File Size
473 kB

производитель
CEL
California Eastern Laboratories. CEL

DESCRIPTION
The NX6350GP series is a 1 270/1 290/1 310/1 330 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.


FEATURES
• Optical output power PO = 8.5 mW
• Low threshold current Ith = 8 mA
• Differential efficiency ηd = 0.35 W/A
• Wide operating temperature range TC = −5 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ5.6 mm
• Focal point 7.5 mm


APPLICATIONS
• 40GBASE-LR4
• 10 Gb/s E-PON ONU
• Bi-Directional 10G SFP+ (CPRI,10G-Ethernet)




Номер в каталоге
Компоненты Описание
View
производитель
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
PDF
California Eastern Laboratories.
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
PDF
Renesas Electronics
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
PDF
Renesas Electronics
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
PDF
Renesas Electronics
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
PDF
Renesas Electronics
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
PDF
California Eastern Laboratories.
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
PDF
California Eastern Laboratories.
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
PDF
Renesas Electronics
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE
PDF
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE
PDF
Renesas Electronics

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]