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NTLJF3117PT1G Даташит - ON Semiconductor

NTLJF3117P image

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NTLJF3117PT1G

Компоненты Описание

Other PDF
  2021  

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8 Pages

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88.3 kB

производитель
ONSEMI
ON Semiconductor ONSEMI

Power MOSFET and Schottky Diode

−20 V, −4.1 A, P−Channel, with 2.0 A 
Schottky Barrier Diode, 2x2 mm, μCool Package


FEATUREs
• FETKY Configuration with MOSFET plus Low Vf Schottky Diode
• μCOOL Package Provides Exposed Drain Pad for Excellent
   Thermal Conduction
• 2x2 mm Footprint Same as SC−88 Package Design
• Independent Pinout Provides Circuit Design Flexibility
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
• High Current Schottky Diode: 2 A Current Rating
• This is a Pb−Free Device


APPLICATIONs
• Optimized for Portable Applications like Cell Phones, Digital
   Cameras, Media Players, etc.
• DC−DC Buck Circuit
• Li−Ion Battery Applications
• Color Display and Camera Flash Regulators


Номер в каталоге
Компоненты Описание
PDF
производитель
Power MOSFET and Schottky Diode
Will Semiconductor Ltd.
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Power MOSFET and Schottky Diode ( Rev : 2016 )
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Power MOSFET and Schottky Diode
Will Semiconductor Ltd.
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor

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