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NTHD4P02F(2004) Даташит - ON Semiconductor

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NTHD4P02F

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  2005   lastest PDF  

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8 Pages

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74.8 kB

производитель
ONSEMI
ON Semiconductor ONSEMI

Power MOSFET and Schottky Diode
−20 V, −3.0 A, Single P−Channel with
3.0 A Schottky Barrier Diode, ChipFET


FEATUREs
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package with Similar Thermal
   Characteristics
• Independent Pinout to each Device to Ease Circuit Design
• Ultra Low VF Schottky
• Pb−Free Package is Available


APPLICATIONs
• Li−Ion Battery Charging
• High Side DC−DC Conversion Circuits
• High Side Drive for Small Brushless DC Motors
• Power Management in Portable, Battery Powered Products


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Компоненты Описание
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производитель
Power MOSFET and Schottky Diode
Will Semiconductor Ltd.
Power MOSFET and Schottky Diode ( Rev : 2007 )
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode ( Rev : 2016 )
ON Semiconductor
Power MOSFET and Schottky Diode
Will Semiconductor Ltd.
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor

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