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NTLGF3501NT2G Даташит - ON Semiconductor

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NTLGF3501NT2G

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ONSEMI
ON Semiconductor ONSEMI

Power MOSFET and Schottky Diode
20 V, 4.6 A FETKY, N−Channel,
2.0 A Schottky Barrier Diode, DFN6


FEATUREs
• Flat Lead 6 Terminal Package 3x3x1 mm
• Reduced Gate Charge to Improve Switching Response
• Enhanced Thermal Characteristics
• This is a Pb−Free Device


APPLICATIONs
• Buck Converter, Inverting Buck/Boost
• High Side DC−DC Conversion Circuits
• Power Management in Portable, HDD and Computing


Номер в каталоге
Компоненты Описание
PDF
производитель
Power MOSFET and Schottky Diode
Will Semiconductor Ltd.
Power MOSFET and Schottky Diode ( Rev : 2007 )
ON Semiconductor
Power MOSFET and Schottky Diode ( Rev : 2004 )
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode ( Rev : 2016 )
ON Semiconductor
Power MOSFET and Schottky Diode
Will Semiconductor Ltd.
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor

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