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NTHD4N02F Даташит - ON Semiconductor

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NTHD4N02F

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  2004  

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8 Pages

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141.4 kB

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ONSEMI
ON Semiconductor ONSEMI

Power MOSFET and Schottky Diode

20 V, 3.9 A, N−Channel, with 3.7 A
Schottky Barrier Diode, ChipFET


FEATUREs
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package with Better Thermals
• Super Low Gate Charge MOSFET
• Ultra Low VF Schottky
• Pb−Free Package is Available


APPLICATIONs
• Fast Switching, low Gate Charge for DC−to−DC Buck and Boost
   Converters
• Li−Ion Battery Applications in Cell Phones, PDAs, DSCs,
   and Media Players
• Load Side Switching


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Компоненты Описание
PDF
производитель
Power MOSFET and Schottky Diode
Will Semiconductor Ltd.
Power MOSFET and Schottky Diode ( Rev : 2007 )
ON Semiconductor
Power MOSFET and Schottky Diode ( Rev : 2004 )
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode ( Rev : 2016 )
ON Semiconductor
Power MOSFET and Schottky Diode
Will Semiconductor Ltd.
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor

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