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NESG3031M05 Даташит - NEC => Renesas Technology

NESG3031M05 image

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NESG3031M05

Компоненты Описание

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3 Pages

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98.1 kB

производитель
NEC
NEC => Renesas Technology NEC

FEATURES
• LOW NOISE FIGURE AND HIGH-GAIN
   NF= 0.95 dB TYP, Ga= 10 dB TYP @ VCE= 2 V, IC= 6 mA, f = 5.2 GHz
   NF= 1.1 dB TYP, Ga= 9.5 dB TYP @ VCE= 2 V, IC= 6 mA, f = 5.8 GHz
• MAXIMUM STABLE POWER GAIN:
   MSG = 14.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
• SiGe HBT TECHNOLOGY:
   USH3 process, fmax = 110 GHz
• M05 PACKAGE:
   Flat-lead 4 pin thin-type super minimold package

Page Link's: 1  2  3 

Номер в каталоге
Компоненты Описание
PDF
производитель
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
NEC => Renesas Technology
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Micro Devices => Onsemi
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR ( Rev : 2004 )
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
NEC => Renesas Technology
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.

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