NESG3031M05 Просмотр технического описания (PDF) - NEC => Renesas Technology
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NESG3031M05 Datasheet PDF : 3 Pages
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NESG3031M05
ELECTRICAL CHARACHTERISTICS (TA = 25°C)
PARAMETER
DC Characteristics
SYMBOL
TEST CONDITIONS
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
ICBO
IEBO
hFE Note 1
VCB = 5 V, IE = 0 mA
VEB = 1 V, IC = 0 mA
VCE = 2 V, IC = 6 mA
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Associated Gain (1)
Associated Gain (2)
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output
Power
3rd Order Intermodulation
Distortion Output Intercept Point
|S21e|2
NF
NF
Ga
Ga
Cre Note 2
MSGNote 3
PO (1 dB)
OIP3
VCE = 3 V, IC = 20 mA, f = 5.8 GHz
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
VCB = 2 V, IE = 0 mA, f = 1 MHz
VCE = 3 V, IC = 20 mA, f = 5.8 GHz
VCE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
VCE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
S21
S12
MIN. TYP. MAX. UNIT
−
−
100
nA
−
−
100
nA
220
300
380
−
6.0
8.5
−
dB
−
0.95
−
dB
−
1.1
1.5
dB
−
10.0
−
dB
7.5
9.5
−
dB
−
0.15
0.25
pF
11.0
14.0
−
dB
−
13.0
−
dBm
−
18.0
−
dBm
hFE CLASSIFICATION
RANK
Marking
hFE Value
FB
T1K
220 to 380
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