DESCRIPTION
NECs NESG2031M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators.

FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
   VCEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE:
   NF = 0.8 dBm at 2 GHz
   NF = 1.3 dBm at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN:
   MSG = 21.5 dB at 2 GHz
• LOW PROFILE M16 PACKAGE:
   6-pin lead-less minimold