datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Fujitsu  >>> MBM29PDS322BE PDF

MBM29PDS322BE Даташит - Fujitsu

MBM29PDS322BE image

Номер в каталоге
MBM29PDS322BE

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
66 Pages

File Size
287.7 kB

производитель
Fujitsu
Fujitsu Fujitsu

DESCRIPTION
The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 63-ball FBGA package. This device is designed to be programmed in system with standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers.


FEATURES
• 0.23 µm Process Technology
• Simultaneous Read/Write operations (Dual Bank)
    Host system can program or erase in one bank, and then read immediately and simultaneously from the other bank with zero latency between read and write operations.
    Read-while-erase
    Read-while-program
• High performance Page Mode
    45 ns maximum page access time (100 ns random access time) 4 words Page Size
• Single 1.8 V read, program, and erase
    Minimized system level power requirements
• Compatible with JEDEC-standard commands Use the same software commands as E2PROMs.
• Compatible with JEDEC-standard world-wide pinouts
    63-ball FBGA (Package suffix: PBT)
• Minimum 100,000 program/erase cycles
• Sector erase architecture
    Eight 4 Kword and sixty-three 32 Kword sectors in word mode
    Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
    T = Top sector
    B = Bottom sector
• Hidden ROM (Hi-ROM) region
    64 Kbyte of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence
    Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC input pin
    At VIL, allows protection of boot sectors, regardless of sector protection/unprotection status.
    At VIH, allows removal of boot sector protection.
    At VACC, increases program performance.
• Embedded EraseTM Algorithms
    Automatically pre-programs and erases the chip or any sector.
• Embedded ProgramTM Algorithms
    Automatically writes and verifies data at specified address.
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
    Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
    When addresses remain stable, automatically switch themselves to low power mode.
• Erase Suspend/Resume
    Suspends the erase operation to allow a read data and/or program in another sector within the same device.
• Sector group protection
    Hardware method disables any combination of sector groups from program or erase operations.
• Sector Group Protection Set function by Extended sector group protection command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
    Temporary sector group unprotection via the RESET pin.

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Номер в каталоге
Компоненты Описание
PDF
производитель
32M (4M × 8/2M × 16) BIT Dual Operation
Fujitsu
32M (4M ×8/2M ×16) BIT Dual Operation
Fujitsu
FLASH MEMORY CMOS 32M (4M × 8/2M × 16) BIT Dual Operation
Fujitsu
16M (2M × 8/1M × 16) BIT Dual Operation
Fujitsu
FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation
Fujitsu
FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation
Fujitsu
FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation
Spansion Inc.
BURST MODE FLASH MEMORY CMOS 32M (2M × 16) BIT
Spansion Inc.
FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation
Fujitsu
FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation
Spansion Inc.

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]