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K2957 Даташит - Hitachi -> Renesas Electronics

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K2957

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9 Pages

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Hitachi
Hitachi -> Renesas Electronics Hitachi

·  Low on-resistance RDS(on)= 7mW typ.
 

·  4V gate drive devices.
 

·  High speed switching

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Компоненты Описание
PDF
производитель
Silicon N Channel DV-L MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel DV–L MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel DV-L MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel DV–L MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel DV–L MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel DV–L MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics

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