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HOME  >>>  Hitachi -> Renesas Electronics  >>> 2SJ479 PDF

2SJ479 Даташит - Hitachi -> Renesas Electronics

2SJ479 image

Номер в каталоге
2SJ479

Other PDF
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PDF
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page
7 Pages

File Size
33.6 kB

производитель
Hitachi
Hitachi -> Renesas Electronics Hitachi

Features
• Low on-resistance RDS(on) = 25 mΩ typ.
• 4V gate drive devices.
• High speed switching

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Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon P Channel DV–L MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P-Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P-Channel MOS FET High Speed Power Switching
Renesas Electronics

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