2SK2957(L),2SK2957(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Ratings
Unit
30
V
±20
V
50
A
200
A
50
A
75
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 30
Gate to source breakdown voltage V(BR)GSS ±20
Zero gate voltege drain current
I DSS
—
Gate to source leak current
I GSS
—
Gate to source cutoff voltage
VGS(off)
1.0
Static drain to source on state
resistance
RDS(on)
—
Static drain to source on state
resistance
RDS(on)
—
Forward transfer admittance
Input capacitance
|yfs|
25
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body–drain diode forward voltage VDF
—
Body–drain diode reverse
recovery time
t rr
—
Note: 3. Pulse test
Typ Max Unit Test Conditions
—
—
V
ID = 10mA, VGS = 0
—
—
V
IG = ±100µA, VDS = 0
—
10
µA
VDS = 30 V, VGS = 0
—
±10 µA
VGS = ±16V, VDS = 0
—
2.0 V
ID = 1mA, VDS = 10V
7.0 10
mΩ
ID = 25A, VGS = 10V Note3
12
18
mΩ
ID = 25A, VGS = 4V Note3
45
—
2000 —
1500 —
350 —
20
—
330 —
190 —
190 —
0.95 —
60
—
S
ID = 25A, VDS = 10V Note3
pF
VDS = 10V
pF
VGS = 0
pF
f = 1MHz
ns
VGS = 10V, ID = 25A
ns
RL = 0.4Ω
ns
ns
V
IF = 50A, VGS = 0
ns
IF = 50A, VGS = 0
diF/ dt =50A/µs
2