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J506 Даташит - Renesas Electronics

2SJ506 image

Номер в каталоге
J506

Компоненты Описание
Silicon P Channel MOS FET High Speed Power Switching

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Renesas
Renesas Electronics Renesas

*  Low on-resistance
    RDS(on)= 0.065 Ωtyp. (at V
    GS = –10V, ID= –5A)

*  Low drive current

*  High speed switching

*  4V gate drive devices.
 

J506

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