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H7P1002DL-E Даташит - Renesas Electronics

H7P1002DL image

Номер в каталоге
H7P1002DL-E

Компоненты Описание
Silicon P Channel MOS FET High Speed Power Switching

Other PDF
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PDF
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page
9 Pages

File Size
105.1 kB

производитель
Renesas
Renesas Electronics Renesas

Features
• Low on-resistance RDS(on) = 85 mΩ typ.
• Low drive current
• 4.5 V gate drive device can driven from 5 V source

Page Link's: 1  2  3  4  5  6  7  8  9 

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