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G4BC20FD Даташит - International Rectifier

G4BC20FD image

Номер в каталоге
G4BC20FD

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page
11 Pages

File Size
201.4 kB

производитель
IR
International Rectifier IR

Features
• Fast: optimized for medium operating frequencies
   ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution
   and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery
   anti-parallel diodes for use in bridge configurations
• Industry standard TO-220AB package


Benefits
• Generation -4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBTs.
   Minimized recovery characteristics require less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
   industry-standard Generation 3 IR IGBTs

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производитель
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier

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