G4BC20FD Просмотр технического описания (PDF) - International Rectifier
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G4BC20FD Datasheet PDF : 11 Pages
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IRG4BC20FD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —
VCE(on)
Collector-to-Emitter Saturation Voltage —
—
—
VGE(th)
Gate Threshold Voltage
3.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage —
gfe
Forward Transconductance T
2.9
ICES
Zero Gate Voltage Collector Current
—
—
VFM
Diode Forward Voltage Drop
—
—
IGES
Gate-to-Emitter Leakage Current
—
—— V
0.72 — V/°C
1.66 2.0
2.06 — V
1.76 —
— 6.0
-11 — mV/°C
5.1 — S
— 250 µA
— 1700
1.4 1.7 V
1.3 1.6
— ±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 9.0A
VGE = 15V
IC = 16A
See Fig. 2, 5
IC = 9.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 9.0A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
27 40
4.2 6.2 nC
9.9 15
43 —
20 — ns
240 360
150 220
0.25 —
0.64 — mJ
0.89 1.3
41 —
22 — ns
320 —
290 —
1.35 — mJ
7.5 — nH
540 —
37 — pF
7.0 —
37 55 ns
55 90
3.5 5.0 A
4.5 8.0
65 138 nC
124 360
240 — A/µs
210 —
Conditions
IC = 9.0A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
TJ = 150°C, See Fig. 11, 18
IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
TJ = 25°C See Fig.
IF = 8.0A
TJ = 125°C 15
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C 16 di/dt = 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
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