G4BC20FD Просмотр технического описания (PDF) - International Rectifier
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G4BC20FD Datasheet PDF : 11 Pages
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14
12
10
8
S qua re wave:
60% of rated
6
v olta ge
I
4
2
Ideal diodes
0
0.1
IRG4BC20FD
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P ow e r Dis sip ation = 13 W
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 oC
TJ = 150 oC
10
100
TJ = 150 oC
10
TJ = 25 oC
VGE = 15V
20µs PULSE WIDTH
1
1
10
VCE, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
VCC = 50V
5µs PULSE WIDTH
1
5 6 7 8 9 10 11 12 13 14
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
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