Description
The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories.

FEATUREs
256K bit Ferroelectric Nonvolatile RAM
•  Organized as 32,768 x 8 bits
•  High Endurance 100 Trillion (10¹⁴) Read/Writes
•  10 Year Data Retention
•  NoDelay™ Writes
•  Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
•  Up to 40 MHz Frequency
•  Direct Hardware Replacement for Serial Flash
•  SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
•  Hardware Protection
•  Software Protection
Device ID and Serial Number
•  Device ID reads out Manufacturer ID & Part ID
•  Unique Serial Number (FM25VN02)
Low Voltage, Low Power
•  Low Voltage Operation 2.0V – 3.6V
•  90 µA Standby Current (typ.)
•  5 µA Sleep Mode Current (typ.)
Industry Standard Configurations
•  Industrial Temperature -40°C to +85°C
•  8-pin “Green”/RoHS SOIC Package
•  8-pin “Green”/RoHS TDFN Package