Description
The  FM25V20  is  a  2-megabit  nonvolatile  memory employing  an  advanced  ferroelectric  process.  A ferroelectric  random  access  memory  or  F-RAM  is nonvolatile  and  performs  reads  and  writes  like  a RAM. It provides reliable data retention for 10 years while  eliminating  the  complexities,  overhead,  and system  level  reliability  problems  caused  by  Serial Flash and other nonvolatile memories.

FEATUREs
2M bit Ferroelectric Nonvolatile RAM        
    Organized as 256K x 8 bits
    High Endurance 100 Trillion (10¹⁴) Read/Writes
    10 Year Data Retention
    NoDelay™ Writes
    Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI
   Up to 40 MHz Frequency
   Direct Hardware Replacement for Serial Flash
   SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Write Protection Scheme
   Hardware Protection
   Software Protection

Device ID
   Device ID reads out Manufacturer ID & Part ID

Low Voltage, Low Power
   Low Voltage Operation 2.0V – 3.6V
   100 A Standby Current (typ.)
   3 A Sleep Mode Current (typ.)

Industry Standard Configurations
   Industrial Temperature -40C to +85C
   8-pin “Green”/RoHS EIAJ SOIC Package
   8-pin “Green”/RoHS TDFN Package
   8-pin “Green”/POHS PDIP Package