datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Ramtron International Corporation  >>> FM24CL64B PDF

FM24CL64B Даташит - Ramtron International Corporation

FM24CL64B image

Номер в каталоге
FM24CL64B

Компоненты Описание

Other PDF
  2011  

PDF
DOWNLOAD     

page
13 Pages

File Size
290.3 kB

производитель
RAMTRON
Ramtron International Corporation RAMTRON

Description
The FM24CL64B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
The FM24CL64B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array in the cycle after it has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. The FM24CL64B is capable of supporting 1014 read/write cycles, or a million times more write cycles than EEPROM.
These capabilities make the FM24CL64B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.
The FM24CL64B provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The FM24CL64B is available in an industry standard 8-pin SOIC package and uses a familiar two-wire protocol. The specifications are guaranteed over an industrial temperature range of -40°C to +85°C.


FEATUREs
64K bit Ferroelectric Nonvolatile RAM
● Organized as 8,192 x 8 bits
● High Endurance 10¹⁴ Read/Writes
● 38 year Data Retention
● NoDelay™ Writes
● Advanced High-Reliability Ferroelectric Process

Fast Two-wire Serial Interface
● Up to 1 MHz maximum bus frequency
● Direct hardware replacement for EEPROM
● Supports legacy timing for 100 kHz & 400 kHz

Low Power Operation
● 2.7V-3.6V Operation
● 100 μA Active Current (100 kHz)
● 3 μA (typ.) Standby Current

Industry Standard Configuration
● Industrial Temperature -40°C to +85°C
● 8-pin “Green”/RoHS SOIC and TDFN Packages

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Номер в каталоге
Компоненты Описание
PDF
производитель
64Kb Serial 3V F-RAM Memory
Ramtron International Corporation
64Kb Serial 3V F-RAM Memory
Cypress Semiconductor
64Kb Serial 3V F-RAM Memory
Cypress Semiconductor
64Kb Serial 5V F-RAM Memory
Ramtron International Corporation
64Kb Serial 5V F-RAM Memory
Cypress Semiconductor
64Kb Serial 5V F-RAM Memory
Ramtron International Corporation
512Kb Serial 3V F-RAM Memory
Cypress Semiconductor
2Mb Serial 3V F-RAM Memory
Cypress Semiconductor
256Kb Serial 3V F-RAM Memory ( Rev : 2009 )
Ramtron International Corporation
256Kb Serial 3V F-RAM Memory
Ramtron International Corporation

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]