[Excelics]

High Efficiency Heterojunction Power FET
   
• +39.5dBm TYPICAL OUTPUT POWER
• 18.0dB TYPICAL POWER GAIN AT 2GHz
• 0.4 X 12,000 MICRON RECESSED
    “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL
    HETEROJUNCTION
    PROFILE PROVIDES EXTRA HIGH POWER
    EFFICIENCY, AND HIGH RELIABILITY
• Idss SORTED IN 300mA PER BIN RANGE