High Efficiency Heterojunction Power FET

·  +24.5dBm TYPICAL OUTPUT POWER
·  11.0dB TYPICAL POWER GAIN FOR EPA040A AND 12.0dB FOR EPA040AV AT 18GHz
·  0.3 X 400 MICRON RECESSED “MUSHROOM” GATE
·  Si₃N₄ PASSIVATION
·  ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
·  EPA040AV WITH VIA HOLE SOURCE GROUNDING
·  Idss SORTED IN 10mA PER BIN RANGE