High Efficiency Heterojunction Power FET
   
• +29.5dBm TYPICAL OUTPUT POWER
• 9.5dB TYPICAL POWER GAIN FOR EPA120E AND
    10.5dB FOR EPA120EV AT 18GHz
• 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
    PROVIDES HIGH POWER EFFICIENCY,
    LINEARITY AND RELIABILITY
• EPA120EV WITH VIA HOLE SOURCE GROUNDING
• Idss SORTED IN 30mA PER BIN RANGE