EPA040A Просмотр технического описания (PDF) - Excelics Semiconductor, Inc.

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EPA040A

High Efficiency Heterojunction Power FET

Excelics Semiconductor, Inc. 

Excelics EPA040A/EPA040AV

DATA SHEET

High Efficiency Heterojunction Power FET

• +24.5dBm TYPICAL OUTPUT POWER

• 11.0dB TYPICAL POWER GAIN FOR EPA040A AND

12.0dB FOR EPA040AV AT 18GHz

• 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE

• Si3N4 PASSIVATION

• ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

• EPA040AV WITH VIA HOLE SOURCE GROUNDING

• Idss SORTED IN 10mA PER BIN RANGE

ELECTRICAL CHARACTERISTICS (Ta = 25 OC)

SYMBOLS PARAMETERS/TEST CONDITIONS

EPA040A

Chip Thickness: 75 ± 20 microns

All Dimensions In Microns

: Via Hole

No Via Hole For EPA040A

EPA040AV

MIN TYP MAX MIN TYP MAX

Output Power at 1dB Compression f=12GHz

22.5

24.5

P1dB Vds=8V, Ids=50% Idss

f=18GHz

24.5

22.5 24.5

24.5

Gain at 1dB Compression

G1dB Vds=8V, Ids=50% Idss

f=12GHz

11.5

13.5

f=18GHz

11.0

12.0 14.0

12.0

Gain at 1dB Compression

PAE

Vds=8V, Ids=50% Idss

f=12GHz

45

46

Idss Saturated Drain Current Vds=3V, Vgs=0V

70

120

160

70

120

160

Gm Transconductance

Vds=3V, Vgs=0V

80

130

80

130

Vp Pinch-off Voltage

Vds=3V, Ids=1.0mA

-1.0

-2.5

-1.0

-2.5

BVgd Drain Breakdown Voltage Igd=1.0mA

-11

-15

-11

-15

BVgs Source Breakdown Voltage Igs=1.0mA

-7

-14

-7

-14

Rth Thermal Resistance (Au-Sn Eutectic Attach)

105

77

MAXIMUM RATINGS AT 25OC

UNIT

dBm

dB

%

mA

mS

V

V

V

oC/W

SYMBOLS

PARAMETERS

EPA040A

EPA040AV

ABSOLUTE1

CONTINUOUS2

ABSOLUTE1

CONTINUOUS2

Vds

Drain-Source Voltage

12V

8V

12V

8V

Vgs

Gate-Source Voltage

-8V

-3V

-8V

-3V

Ids

Drain Current

Idss

135mA

Idss

Idss

Igsf

Forward Gate Current

20mA

3mA

20mA

3mA

Pin

Input Power

Tch

Channel Temperature

Tstg

Storage Temperature

21dBm

175oC

-65/175oC

@ 3dB

Compression

150oC

-65/150oC

21dBm

175oC

-65/175oC

@ 3dB

Compression

150oC

-65/150oC

Pt

Total Power Dissipation

1.3W

1.1W

1.8W

1.5W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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