EIA1718-1P Даташит - Excelics Semiconductor, Inc.
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EIA1718-1P
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Excelics Semiconductor, Inc.
17.7-18.7GHz, 1W Internally Matched Power FET
• 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM
• EIA FEATURES HIGH PAE( 25% TYPICAL)
• EIB FEATURES HIGH IP3(43dBm TYPICAL)
• +30.0/+29.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB
• 6.5/5.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB
• NON-HERMETIC METAL FLANGE PACKAGE
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17.7-18.7GHz, Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
18.7-19.7GHz, 1W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
18.15-18.75GHz, 1W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET ( Rev : 2005 )
MITSUBISHI ELECTRIC
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