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DS_K6F2016U4E Даташит - Samsung

DS_K6F2016U4E image

Номер в каталоге
DS_K6F2016U4E

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9 Pages

File Size
109.7 kB

производитель
Samsung
Samsung Samsung

GENERAL DESCRIPTION
The K6F2016U4E families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.


FEATURES
• Process Technology: Full CMOS
• Organization: 128K x16 bit
• Power Supply Voltage: 2.7~3.3V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 48-TBGA-6.00x7.00

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Номер в каталоге
Компоненты Описание
PDF
производитель
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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2M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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128K x8 bit Low Power CMOS Static RAM
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128K x8 bit Low Power CMOS Static RAM
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512Kx8 bit Low Power full CMOS Static RAM
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512Kx16 bit Low Power Full CMOS Static RAM
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