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DS_K6F2008U2E Даташит - Samsung

DS_K6F2008U2E image

Номер в каталоге
DS_K6F2008U2E

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page
10 Pages

File Size
120.2 kB

производитель
Samsung
Samsung Samsung

GENERAL DESCRIPTION
The K6F2008U2E families are fabricated by SAMSUNG¢s advanced Full CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.


FEATURES
• Process Technology: Full CMOS
• Organization: 256Kx8
• Power Supply Voltage: 2.7~3.3V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 32-TSOP1-0813.4F, 48(36)-TBGA-6.00x7.00

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Номер в каталоге
Компоненты Описание
PDF
производитель
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung
512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung
2M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung
512Kx8 bit Low Power full CMOS Static RAM
Samsung
512Kx16 bit Low Power Full CMOS Static RAM
Samsung
32Kx8 bit Low Power full CMOS Static RAM
Samsung
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
Unspecified

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