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DS_K6F8016U6C Даташит - Samsung

DS_K6F8016U6C image

Номер в каталоге
DS_K6F8016U6C

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9 Pages

File Size
124.5 kB

производитель
Samsung
Samsung Samsung

GENERAL DESCRIPTION
The K6F8016U6C families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.


FEATURES
• Process Technology: Full CMOS
• Organization: 512K x16
• Power Supply Voltage: 2.7~3.3V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 48-FBGA-6.00x7.00

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Номер в каталоге
Компоненты Описание
PDF
производитель
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung
2M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
Unspecified
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX

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