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CPD89V Даташит - Central Semiconductor

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CPD89V

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Switching Diode High Current Diode Chip

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PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 12.8 x 12.8 MILS
Die Thickness 7.1 MILS
Anode Bonding Pad Area 5.1 x 5.1 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au-As - 10,000Å

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