CP327V Даташит - Central Semiconductor
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CP327V
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 23 x 23 MILS
Die Thickness 7.1 MILS
Base Bonding Pad Area 4.7 x 4.7 MILS
Emitter Bonding Pad Area 4.7 x 4.7 MILS
Top Side Metalization Al-Si - 30,000Å
Back Side Metalization Au - 12,000Å
Номер в каталоге
Компоненты Описание
PDF
производитель
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