CP257 Даташит - Central Semiconductor
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CP257
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2 Pages
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 20 x 20 MILS
Die Thickness 8.0 MILS
Base Bonding Pad Area 4.9 x 4.9 MILS
Emitter Bonding Pad Area 6.4 x 6.4 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 16,000Å
Номер в каталоге
Компоненты Описание
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производитель
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