CP221 Даташит - Central Semiconductor
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CP221
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL BASE
Die Size 39.5 X 39.5 MILS
Die Thickness 9.8 MILS
Base Bonding Pad Area 3.9 x 5.1 MILS
Emitter Bonding Pad Area 7.9 x 3.9 MILS
Top Side Metalization Al - 24,000Å
Back Side Metalization Au - 12,000Å
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производитель
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