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BS616LV2015 Даташит - Brilliance Semiconductor

BS616LV2015 image

Номер в каталоге
BS616LV2015

Компоненты Описание

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page
11 Pages

File Size
226 kB

производитель
BSI
Brilliance Semiconductor BSI

DESCRIPTION
The BS616LV2015 is a high performance, very low power CMOS Static  Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 4.5V to 5.5V supply voltage.


FEATURES
• Very low operation voltage : 4.5 ~ 5.5V
• Very low power consumption :
    Vcc = 5.0V C-grade: 40mA (Max.) operating current
                       I -grade: 45mA (Max.) operating current
                       0.6uA (Typ.) CMOS standby current
• High speed access time :
    -70 70ns (Max.) at Vcc = 5.0V
    -55 55ns (Max.) at Vcc = 5.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin

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Номер в каталоге
Компоненты Описание
PDF
производитель
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
Brilliance Semiconductor
Very Low Power CMOS SRAM 128K X 16 bit ( Rev : 2008 )
Brilliance Semiconductor
Very Low Power CMOS SRAM 128K X 16 bit ( Rev : 2006 )
Brilliance Semiconductor
Very Low Power CMOS SRAM 128K X 16 bit
Brilliance Semiconductor

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