DESCRIPTION
The BS616LV2019 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 by 16 bits and operates form a wide range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.3uA at 3.0V/25OC and maximum access time of 55ns at 2.7V/85OC.

FEATURES
• Wide VCC operation voltage : 2.4V ~ 3.6V
• Very low power consumption :
    VCC = 3.0V Operation current : 25mA (Max.) at 55ns
                                                       2mA (Max.) at 1MHz
                        Standby current : 0.3uA (Typ.) at 25 °C
• High speed access time :
    -55 55ns(Max.) at VCC=2.7~3.6V
    -70 70ns(Max.) at VCC=2.4~3.6V
• Automatic power down when chip is deselected
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin.
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V