DESCRIPTION
NPN wideband transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base.

FEATURES
• Optimum temperature profile and excellent reliability properties ensured by emitter-ballasting resistors and application of gold sandwich metallization.

APPLICATIONS
• MATV and microwave amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc.