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BFQ135 Просмотр технического описания (PDF) - Philips Electronics

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Компоненты Описание
Список матч
BFQ135
Philips
Philips Electronics Philips
BFQ135 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
NPN 6.5 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
Tc 145 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
thermal resistance from junction to case
Product specification
BFQ135
MIN.
65
MAX.
25
19
2
150
2.7
+150
200
UNIT
V
V
V
mA
W
°C
°C
VALUE
20
UNIT
K/W
1997 Nov 07
3

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