BFQ135 Просмотр технического описания (PDF) - Philips Electronics

Номер в каталоге

Компоненты Описание

Список матч

BFQ135

NPN 6.5 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

NPN 6.5 GHz wideband transistor

Product specification

BFQ135

–30

d im

(dB)

–40

–50

–60

–70

–80

50

MEA954

150

I C (mA)

250

VCE = 18 V.

Fig.5 Intermodulation distortion as a function of

collector current; typical values.

–40

d2

(dB)

–60

MEA956

–80

0

100

I C (mA)

200

VCE = 18 V; VO = 50 dBmV; Tamb = 25 °C;

measured at fp + fq = 450 MHz.

Fig.6 Second order intermodulation distortion as a

function of collector current; typical values.

–40

d2

(dB)

–60

MEA955

–80

0

100

I C (mA)

200

VCE = 18 V; VO = 50 dBmV; Tamb = 25 °C;

measured at fp + fq = 810 MHz.

Fig.7 Second order intermodulation distortion as a

function of collector current; typical values.

1997 Nov 07

6

Share Link: