Field Effect Transistor
Silicon N Channel MOS Type (π-MOS II.5)
High Speed, High Current DC-DC Converter,
Relay Drive and Motor Drive Applications

FEATUREs
• Low Drain-Source ON Resistance
   - RDS(ON) = 1.1Ω (Typ.)
• High Forward Transfer Admittance
   - Yfs = 4.0S (Typ.)
• Low Leakage Current
   - IDSS = 300µA (Max.) @ VDS = 720V
• Enhancement-Mode
   - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA