TPC8209 Даташит - Toshiba
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TPC8209
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Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
● Small footprint due to small and thin package
● Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.)
● High forward transfer admittance: |Yfs| = 10 S (typ.)
● Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
● Enhancement−mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Номер в каталоге
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производитель
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) ( Rev : 2003 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) ( Rev : 2013 )
Toshiba
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