2SK1358 Просмотр технического описания (PDF) - Toshiba

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2SK1358

Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.5)

Toshiba 

TOSHIBA

Discrete Semiconductors

Field Effect Transistor

Silicon N Channel MOS Type (π-MOS II.5)

High Speed, High Current DC-DC Converter,

Relay Drive and Motor Drive Applications

Features

• Low Drain-Source ON Resistance

- RDS(ON) = 1.1Ω (Typ.)

• High Forward Transfer Admittance

- Yfs = 4.0S (Typ.)

• Low Leakage Current

- IDSS = 300µA (Max.) @ VDS = 720V

• Enhancement-Mode

- Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA

Absolute Maximum Ratings (Ta = 25°C)

CHARACTERISTIC

SYMBOL RATING

Drain-Source Voltage

Drain-Gate Voltage (RGS = 20kΩ)

Gate-Source Voltage

Drain Current

DC

Pulse

Drain Power Dissipation

(Tc = 25°C)

Channel Temperature

Storage Temperature Range

VDSS

900

VDGR

900

VGSS

±30

ID

9

IDP

27

PD

150

Tch

150

Tstg

-55 ~ 150

UNIT

V

V

V

A

W

°C

°C

Thermal Characteristics

CHARACTERISTIC

SYMBOL MAX. UNIT

Thermal Resistance, Channel to Case

Thermal Resistance, Channel to Ambient

Rth(ch-c)

Rth(ch-a)

0.833

50

°C/W

°C/W

This transistor is an electrostatic sensitive device. Please handle with care.

2SK1358

Industrial Applications Unit in mm

TOSHIBA CORPORATION

1/6

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