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2SJ574 Даташит - Renesas Electronics

2SJ574 image

Номер в каталоге
2SJ574

Компоненты Описание
Silicon P Channel MOS FET High Speed Switching

Other PDF
  2003   2014  

PDF
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page
7 Pages

File Size
82.3 kB

производитель
Renesas
Renesas Electronics Renesas

Features
• Low on-resistance
   RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA)
   RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA)
• 4 V gate drive device.
• Small package (MPAK)

Page Link's: 1  2  3  4  5  6  7 

Номер в каталоге
Компоненты Описание
PDF
производитель
2SJ574
Silicon P Channel MOS FET High Speed Switching
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2SJ576
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