Hitachi -> Renesas Electronics 2SJ574 Даташит, 2SJ574 PDF, даташитов

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2SJ574 Даташит - Hitachi -> Renesas Electronics

Номер в каталоге

2SJ574

Компоненты Описание

Silicon P Channel MOS FET High Speed Switching

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8 Pages

File Size

36.1 kB

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Hitachi -> Renesas Electronics

Features
• Low on-resistance
RDS = 1.1 Ω typ. (VGS = -10 V , ID = -150 mA)
RDS = 2.2 Ω typ. (VGS = -4 V , ID = -150 mA)
• 4 V gate drive device.
• Small package (MPAK)

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Номер в каталоге

Компоненты Описание

PDF

производитель

2SJ574

Silicon P Channel MOS FET High Speed Switching ( Rev : 2014 )

View

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2SJ575

Silicon P Channel MOS FET High Speed Switching

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2SJ587

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Hitachi -> Renesas Electronics

2SJ588

Silicon P Channel MOS FET High Speed Switching

View

Hitachi -> Renesas Electronics

2SJ574

Silicon P Channel MOS FET High Speed Switching ( Rev : 2003 )

View

Renesas Electronics

2SJ574

Silicon P Channel MOS FET High Speed Switching

View

Renesas Electronics

2SJ576

Silicon P Channel MOS FET High Speed Switching

View

Hitachi -> Renesas Electronics

2SJ576

Silicon P Channel MOS FET High Speed Switching

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2SJ575

Silicon P Channel MOS FET High Speed Switching

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P-Channel MOS FET / High-Speed Switching

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NEC => Renesas Technology

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